Triggered Indistinguishable Single Photons with Narrow Line Widths from Site-Controlled Quantum Dots
Triggered Indistinguishable Single Photons with Narrow Line Widths from Site-Controlled Quantum Dots
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DOI：
10.1021/nl303668z
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发表时间：
2013-01-01
期刊：
影响因子：
10.8
通讯作者：
Michler, P.
中科院分区：
文献类型：
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作者：
Joens, K. D.;Atkinson, P.;Michler, P.
在这封信中，我们介绍了In(Ga)As/GaAs量子点的窄线宽(7µeV)，几乎无背景的单光子发射(g((2))(0)=0.02)和高度不可分辨的光子(V=0.73)。这些优异的性能是通过在非原位凹坑图案衬底上的过度生长和光谱不同的量子点层的垂直堆叠来实现的。我们的研究为将量子点作为不可分辨的单光子源大规模集成到量子光子电路中铺平了道路。
In this Letter, we present narrow line width (7 mu eV), nearly background-free single-photon emission (g((2))(0) = 0.02) and highly indistinguishable photons (V = 0.73) from site-controlled In(Ga)As/GaAs quantum dots. These excellent properties have been achieved by combining overgrowth on ex situ pit-patterned substrates with vertical stacking of spectrally distinct quantum dot layers. Our study paves the way for large-scale integration of quantum dots into quantum photonic circuits as indistinguishable single-photon sources.