Control of spontaneous emission from InP single quantum dots in GaInP photonic crystal nanocavities

Control of spontaneous emission from InP single quantum dots in GaInP photonic crystal nanocavities
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GaInP 光子晶体纳米腔中 InP 单量子点自发发射的控制

DOI：
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发表时间：
2010
期刊：
影响因子：
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通讯作者：
M. S. Skolnick
M. S. Skolnick
中科院分区：
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文献类型：
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作者：
I. Luxmoore;E. Ahmadi;N. A. Wasley;A. M. Fox;A. Tartakovskii;A. Krysa;M. S. Skolnick

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我们展示了半导体量子点与在可见光谱中工作的光子晶体腔模式耦合。我们介绍了 GaInP 中二维光子晶体腔的设计、制造和表征，并在 680 nm 处测量了超过 7500 的品质因数。我们证明了对 InP 量子点自发发射率的完全控制，并通过光谱调谐激子发射能量与基本腔模式共振，我们观察到 ~8 的 Purcell 增强。
We demonstrate semiconductor quantum dots coupled to photonic crystal cavity modes operating in the visible spectrum. We present the design, fabrication, and characterization of two dimensional photonic crystal cavities in GaInP and measure quality factors in excess of 7500 at 680 nm. We demonstrate full control over the spontaneous emission rate of InP quantum dots and by spectrally tuning the exciton emission energy into resonance with the fundamental cavity mode we observe a Purcell enhancement of ∼8.