Si-Based ZnO Ultraviolet Photodiodes
Si-Based ZnO Ultraviolet Photodiodes
复制标题
DOI：
10.5772/48825
复制
发表时间：
2012-12
期刊：
影响因子：
--
通讯作者：
Lung-Chien Chen
中科院分区：
文献类型：
--
作者：
Lung-Chien Chen
基于半导体的紫外（UV）光电二极管不断发展，可广泛应用于各种商业、民用和军事领域，如光通信、导弹发射探测、火焰探测、UV辐射校准和监测、化学和生物分析、光通信和天文研究等[1-2]。所有这些应用都需要非常灵敏的器件，具有高响应度、快速响应时间和良好的信噪比。目前，紫外光谱范围内的光检测仍然使用硅基光学光电二极管。由于硅基光电二极管对可见光和红外辐射敏感，因此在UV区域的响应度仍然很低[3-5]。为了避免这些缺点，宽带隙材料（如金刚石，SiC，III族氮化物和宽带隙II-VI族材料）正在进行深入研究，以提高UV光电二极管的响应度和稳定性，因为它们固有的可见盲[6]。
Semiconductor-based ultraviolet (UV) photodiodes have been continuously developed that can be widely used in various commercial, civilian areas, and military applications, such as optical communications, missile launching detection, flame detection, UV radiation calibra‐ tion and monitoring, chemical and biological analysis, optical communications, and astro‐ nomical studies, etc. [1-2]. All these applications require very sensitive devices with high responsivity, fast response time, and good signal-to-noise ratio is common desirable charac‐ teristics. Currently, light detection in the UV spectral range still uses Si-based optical photo‐ diodes. Due to the Si-based photodiodes are sensitive to visible and infrared radiation, the responsivity in the UV region is still low [3-5]. To avoid these disadvantages, wide-bandgap materials (such as diamond, SiC, III-nitrides and wide-bandgap II–VI materials) are under intensive studies to improve the responsivity and stability of UV photodiodes, because of their intrinsic visible-blindness [6].