Successive oxidation stages and annealing behavior of the Si(111) 7×7 surface observed with scanning tunneling microscopy and scanning tunneling spectroscopy
Successive oxidation stages and annealing behavior of the Si(111) 7×7 surface observed with scanning tunneling microscopy and scanning tunneling spectroscopy
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用扫描隧道显微镜和扫描隧道光谱观察 Si(111) 7×7 表面的连续氧化阶段和退火行为
DOI：
10.1116/1.585509
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发表时间：
1991
影响因子：
1.4
通讯作者：
R. Koch
中科院分区：
文献类型：
--
作者：
J. Pelz;R. Koch
扫描隧道显微镜和光谱揭示了在300 K下暴露于氧气的Si（111）7×7表面上的吸附原子位置至少发生两阶段反应过程。第一阶段反应的吸附原子的电子光谱略有变化，并显示出对7×7晶胞的故障半和角落的偏好，而第二阶段的吸附原子在地形图像中看起来类似于“丢失”或“降低”的吸附原子。退火的表面到625 K引起两个阶段的数量和网站偏好的大的变化。
Scanning tunneling microscopy and spectroscopy reveal at least a two‐stage reaction process which occurs at adatom sites on Si (111) 7×7 surfaces exposed to oxygen at 300 K. Reacted adatoms in the first stage have a slightly modified electronic spectrum and show a preference for the faulted half and the corners of the 7×7 unit cell, while second stage adatoms appear similar to ‘‘missing’’ or ‘‘lowered’’ adatoms in topographic images. Annealing the surface to ∼625 K causes large changes in the number and site preference of the two stages.