Enhanced Light Output Power of InGaN/GaN Light Emitting Diodes with Embedded Air Prisms
Enhanced Light Output Power of InGaN/GaN Light Emitting Diodes with Embedded Air Prisms
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DOI：
10.1149/1.3266905
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发表时间：
2010-01-01
影响因子：
--
通讯作者：
Hong, Chang-Hee
中科院分区：
文献类型：
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作者：
Kim, Hyung Gu;Kim, Hee Yun;Hong, Chang-Hee
本文报道了用湿法腐蚀方法制备的嵌入空气棱镜的选择性金属有机化学气相沉积InGaN/GaN发光二极管的特性。首先，KOH水溶液（蚀刻剂）移除SiO（2）掩模图案以促进随后蚀刻穿过N面GaN以实现晶体学上限定的棱柱形状。空气棱镜的良好对准阵列形成并分布在整个装置中。EAP-LED的输出功率是传统LED的2.1倍。较高的光提取归因于由于GaN和空气棱镜之间的大折射率差而导致的EAP界面处的光子散射的改善。(C)2009年电化学学会。[DOI：10.1149/1.3266905]保留所有权利。
We report characteristics of the InGaN/GaN light emitting diodes (LEDs) grown by selective metallorganic chemical vapor deposition with embedded air prisms (EAPs) via a wet etching process. At first, aqueous KOH solution, an etchant, removed the SiO(2) mask pattern to facilitate a subsequent etching through N-face GaN to achieve crystallographically defined prism shapes. Well-aligned arrays of air prisms are formed and distributed throughout the entire device. The EAP-LED output power was increased 2.1 times compared with the conventional LED. The higher light extraction is attributed to the improvement in the scattering of photons at the EAP interface due to the large index difference between GaN and air prisms. (C) 2009 The Electrochemical Society. [DOI: 10.1149/1.3266905] All rights reserved.