Thermometry of Silicon Nanoparticles
Thermometry of Silicon Nanoparticles
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DOI：
10.1103/physrevapplied.9.014005
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发表时间：
2018-01-09
影响因子：
4.6
通讯作者：
Regan, B. C.
中科院分区：
文献类型：
--
作者：
Mecklenburg, Matthew;Zutter, Brian;Regan, B. C.
目前的测温技术缺乏在典型的、高尺度的现代晶体管中观察温度梯度所需的空间分辨率。作为解决这一问题的一步，我们在配备电子能量损失谱（EELS）的扫描透射电子显微镜（STEM）中使用芯片式加热样品支架，测量了硅纳米颗粒中体积等离子体能量从室温到1250℃的温度依赖性。在硅的热膨胀作用下，电子气体的等离子体能量发生了预期的变化。推翻这一推理，我们发现等离子体能量的测量提供了纳米粒子温度的独立测量，与加热器芯片的宏观，双功能加热器和温度计的温度一致，在温度计校准的5%精度内。因此，硅有可能通过测量其体积等离子体能量来提供自己的高空间分辨率测温读出信号。此外，纳米颗粒通常可以作为方便的纳米温度计用于原位电子显微镜实验。
Current thermometry techniques lack the spatial resolution required to see the temperature gradients in typical, highly scaledmodern transistors. As a step toward addressing this problem, we measure the temperature dependence of the volume plasmon energy in silicon nanoparticles from room temperature to 1250 degrees C, using a chip-style heating sample holder in a scanning transmission electron microscope (STEM) equipped with electron energy loss spectroscopy (EELS). The plasmon energy changes as expected for an electron gas subject to the thermal expansion of silicon. Reversing this reasoning, we find that measurements of the plasmon energy provide an independent measure of the nanoparticle temperature consistent with that of the heater chip's macroscopic, dual-function heater-and-thermometer to within the 5% accuracy of the thermometer's calibration. Thus, silicon has the potential to provide its own high-spatial-resolution thermometric readout signal via measurements of its volume plasmon energy. Furthermore, nanoparticles can, in general, serve as convenient nanothermometers for in situ electron-microscopy experiments.