Characterization of amorphous barium titanate films prepared by rf sputtering
Characterization of amorphous barium titanate films prepared by rf sputtering
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射频溅射制备非晶钛酸钡薄膜的表征
DOI：
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发表时间：
1979
期刊：
影响因子：
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通讯作者：
J. Crowe
中科院分区：
文献类型：
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作者：
D. Mcclure;J. Crowe
研究了射频溅射法制备的非晶BaTiO_3薄膜的物理和电学性质随射频功率、衬底温度和偏压、溅射气压和成分的变化规律。发现在室温下沉积的薄膜的电荷存储容量为10.04C/m2。这些薄膜表现出的介电常数为0.14，对频率或温度的依赖性很小。没有观察到铁电行为的证据。不充分的基板冷却产生的薄膜具有非常高的耗散因子和低击穿强度。向溅射气体中添加氧导致膜表现出在低频下增加的强电容温度系数。氧添加剂产生的钛钡比中存在的薄膜中的变化，并引起增加的介电损耗因子，直流电导率，和缺陷密度。
The physical and electrical properties of amorphous BaTiO3 films prepared by rf sputtering have been investigated as a function of rf power, substrate temperature and bias, and sputtering gas pressure and composition. A charge storage capacity of ∠0.04 C/m2 was found for films prepared in pure argon on substrates held at near room temperture during deposition. These films showed a dielectric constant of ∠14 with little dependence on frequency or temperature. No evidence for ferroelectric behavior was observed. Inadequate substrate cooling yielded films which had very high dissipation factors and low breakdown strengths. The addition of oxygen to the sputtering gas resulted in films which exhibited a strong temperature coefficient of capacitance which increased at low frequencies. Oxygen additions produced a change in the titanium to barium ratio present in the films and gave rise to increases in the dielectric dissipation factor, the dc conductivity, and the defect density.