Studies of oxide/ZnO near-interfacial defects by photoluminescence and deep level transient spectroscopy
Studies of oxide/ZnO near-interfacial defects by photoluminescence and deep level transient spectroscopy
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DOI：
10.1063/1.2838326
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发表时间：
2008-01
影响因子：
4
通讯作者：
Wang Ranshi;Q. Gu;C. Ling;H. Ong
中科院分区：
文献类型：
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作者：
Wang Ranshi;Q. Gu;C. Ling;H. Ong
通过光致发光、深能级瞬态光谱和二次离子质谱研究了热退火时 Al2O3∕ZnO 和 MgO∕ZnO 近界面缺陷的演变。我们发现所有结果都紧密相关，并且它们指向退火过程中 Zn 从 ZnO 向外扩散到氧化物层并在界面区域附近产生深能级缺陷的方向。这些缺陷减少了带边发射并增加了 2.37eV 的深能级发射。我们的研究表明，氧化物/ZnO 界面相对脆弱，在制造金属氧化物-ZnO 基晶体管和发光二极管时必须小心。
The evolution of near-interfacial defects from Al2O3∕ZnO and MgO∕ZnO upon thermal annealing has been studied by photoluminescence, deep level transient spectroscopy, and secondary ion mass spectroscopy. We find that all the results are strongly connected and that they point to the direction that Zn outdiffuses from ZnO to the oxide layer during annealing and creates deep level defects near the interfacial region. These defects reduce the band-edge emission and increase the deep level emission at 2.37eV. Our study shows that the oxide/ZnO interface is relatively fragile and caution must be taken for making metal-oxide-ZnO based transistors and light emitting diodes.