Effect of Drift Layer on the Breakdown Voltage of Fully-Vertical GaN-on-Si p-n Diodes
Effect of Drift Layer on the Breakdown Voltage of Fully-Vertical GaN-on-Si p-n Diodes
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DOI：
10.1109/led.2017.2765340
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发表时间：
2017-10
影响因子：
4.9
通讯作者：
Suguru Mase;T. Hamada;J. Freedsman;T. Egawa
中科院分区：
文献类型：
--
作者：
Suguru Mase;T. Hamada;J. Freedsman;T. Egawa
这封信报告的外延生长和设备制造的金属有机化学气相沉积生长的全垂直GaN硅p-n二极管。通过分析漂移层的穿透位错、载流子特性以及制作的p-n二极管的电流-电压特性，揭示了n-GaN漂移层的电学特性和外延生长的强烈依赖性。此外，我们的GaN-on-Si垂直p-n二极管与2.3- $\mu \text{m}$ -厚的n−-GaN漂移层表现出的导通电阻为7.7 $\text{m}\Omega ~\cdot $cm 2，导通电压为3.4 V，击穿电压为369 V，分别。
This letter reports on the epitaxial growth and device fabrication of metal-organic chemical vapor deposition grown fully vertical GaN-on-Si p-n diodes. A strong dependence in the electrical characteristics and epitaxial growth of n−-GaN drift layer was revealed by analyzing the threading dislocations, and carrier properties of the drift layers and current-voltage characteristics of the fabricated p-n diodes. Further, our GaN-on-Si vertical p-n diode with a 2.3- $\mu \text{m}$ -thick n−-GaN drift layer exhibited an on-resistance of 7.7 $\text{m}\Omega ~\cdot $ cm2, a turn-on voltage of 3.4 V, and a breakdown voltage of 369 V, respectively.