Grown-in microdefects, residual vacancies and oxygen precipitation bands in Czochralski silicon
Grown-in microdefects, residual vacancies and oxygen precipitation bands in Czochralski silicon
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DOI：
10.1016/s0022-0248(99)00202-x
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发表时间：
1999-08-01
影响因子：
1.8
通讯作者：
Falster, R
中科院分区：
文献类型：
--
作者：
Voronkov, VV;Falster, R
本文分析了无位错硅晶体中多步空位聚集的模型。在这个模型中，空位首先成核（通常在1100 ℃以下）。当空位被氧束缚成O2 V络合物时，空位损失到空隙被延迟到低于某个特征温度（约1020 ℃）。这些剩余的空位控制进一步冷却时氧化物颗粒的成核。一些空位甚至在这个阶段存活下来，并在更低的温度（约700摄氏度）下控制氧簇的成核。氧团簇是后续热处理过程中的主要沉淀核。正是通过残余空位，氧沉淀行为与生长的微缺陷（空隙和颗粒）密切相关。微缺陷性质和残余空位浓度（C-res）的计算依赖于起始空位浓度（C-0）。C-res（C-0）函数呈双峰型，当C-0沿径向或轴向逐渐减小时，会形成带状降水模式。该模型占复杂的（强烈带状）沉淀模式，特别是那些观察到的停止和淬火晶体。(C)1999 Elsevier Science B. V.保留所有权利。
A model of multi-step vacancy aggregation in dislocation-free silicon crystals is analyzed, In this model, voids are first nucleated (normally just below 1100 degrees C). The vacancy loss to voids is retarded below some characteristic temperature (about 1020 degrees C) as the vacancies become bound by oxygen into O2V complexes. These remaining vacancies control nucleation of oxide particles on further cooling. Some vacancies survive even this stage and control nucleation of oxygen clusters at still lower temperature (around 700 degrees C). The oxygen clusters are major precipitation nuclei during subsequent heat treatments. It is through residual vacancies that the oxygen precipitation behavior is closely related to the grown-in microdefects (voids and particles). The microdefect properties and the residual vacancy concentration (C-res) are computed in dependence of the starting vacancy concentration (C-0). The C-res(C-0) function is of a twin-peak type which results in a banded precipitation pattern if C-0 decreases gradually either in radial or axial direction. The model accounts for complicated (strongly banded) precipitation patterns, particularly those observed in halted and quenched crystals. (C) 1999 Elsevier Science B.V. All rights reserved.