Phase-Field Study of Electromigration-Induced Shape Evolution of a Transgranular Finger-Like Slit
Phase-Field Study of Electromigration-Induced Shape Evolution of a Transgranular Finger-Like Slit
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DOI：
10.1007/s11664-018-6619-5
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发表时间：
2018-08
影响因子：
2.1
通讯作者：
Jay Santoki;A. Mukherjee;D. Schneider;M. Selzer;B. Nestler
中科院分区：
文献类型：
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作者：
Jay Santoki;A. Mukherjee;D. Schneider;M. Selzer;B. Nestler
由于薄膜中空穴的传播引起的电迁移损伤对互连线的有效设计具有重要意义，因此引起了人们的广泛关注。空洞可以沿着线漂移，保持其形状，或演变成各种与时间相关的配置，这是由毛细作用和电子风之间的相互作用。我们用相场方法研究了圆形孔洞到指状狭缝的转变。在初始瞬态状态之后，空隙达到具有窄平行狭缝状主体的平衡形状，所述窄平行狭缝状主体包含圆形后端和抛物线尖端。随后的漂移的空隙的特点是形状不变性沿着与稳态狭缝宽度和速度，其规模与所施加的电场asand，分别。从相场模拟得到的结果进行了严格的比较与尖锐的接口解决方案。研究中的缺陷，在倒装芯片Sn-Ag-Cu焊料凸点和制造所需的微/纳米尺寸的通道的预测方面进行了讨论。
Electromigration damage due to void propagation in thin films has garnered much attention due to its implications for efficient design of interconnects. Voids can drift along the line, preserving its shape, or evolve into various time-dependent configurations, which are governed by the interplay between the capillarity and electron wind force. We have employed the phase-field method to elucidate the transition of a circular void to a finger-like slit. Following an initial transient regime, the void attains an equilibrium shape with a narrow parallel slit-like body, which contains a circular rear end, and a parabolic tip. The subsequent drift of the void is characterized by shape invariance along with a steady-state slit width and velocity, which scale with the applied electric field asand, respectively. The results obtained from phase-field simulations are critically compared with the sharp-interface solution. Repercussions of the study, in terms of prediction of void migration in flip-chip Sn-Ag-Cu solder bumps and fabrication of channels with desired micro/nanodimensions, are discussed.