An Analytical Model of the Forward I– V Characteristics of 4H-SiC p-i-n Diodes Valid for a Wide Range of Temperature and Current
An Analytical Model of the Forward I– V Characteristics of 4H-SiC p-i-n Diodes Valid for a Wide Range of Temperature and Current
复制标题
4H-SiC p-i-n 二极管正向 I-V 特性的分析模型，适用于较宽的温度和电流范围
DOI：
10.1109/tpel.2011.2129533
复制
发表时间：
2011
影响因子：
6.7
通讯作者：
F. Pezzimenti
中科院分区：
文献类型：
--
作者：
S. Bellone;F. D. Della Corte;L. F. Albanese;F. Pezzimenti
利用一个分析模型研究了4H-SiCp-i-n二极管在较宽的电流和温度范围内的正向I-V特性，该模型允许我们突出在不同的二极管区域，即高掺杂区域、中性基区和空间电荷层中的少数电流贡献。通过考虑各种物理参数的掺杂依赖关系，如带隙变窄、不完全掺杂激活、载流子寿命和迁移率，该模型可用于研究不同电流水平和温度下各种材料性质的作用。在较宽的电流和温度范围内，通过与数值模拟和实验数据的比较，验证了该模型的准确性，从而为更好地了解工艺参数对二极管稳态行为的影响以及获得准确的二极管电路模型提供了非常有用的工具。
The forward I-V characteristics of 4H-SiC p-i-n diodes are studied in a wide range of currents and temperatures by means of an analytical model that allows us to highlight the minority current contributions in various diode regions, namely, the highly doped regions, the neutral base, and the space charge layer. By accounting for the doping dependence of various physical parameters, such as bandgap narrowing, incomplete doping activation, carrier lifetime, and mobility, the model turns useful to investigate the role of various material properties at different current levels and temperatures. The accuracy of the model is verified by comparisons with numerical simulations and experimental data in a wide range of currents and temperatures, so that this model turns very useful for better understanding the impact of technological parameters on the steady-state behavior of diodes and obtaining an accurate circuital model of diodes.