Formation of very thin epitaxial Al2O3 pre-layer with very smooth surface on Si (111) using a protective oxide layer
Formation of very thin epitaxial Al2O3 pre-layer with very smooth surface on Si (111) using a protective oxide layer
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DOI：
10.1143/jjap.38.2333
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发表时间：
1999-04-01
期刊：
影响因子：
--
通讯作者：
Ishida, M
中科院分区：
文献类型：
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作者：
Jung, YC;Miura, H;Ishida, M
提出了利用硅氧化物保护层和铝层形成Al_2O_3预制层的方法。在覆盖有薄硅氧化层的硅表面沉积一层薄的铝，并在800℃下进行热处理，在Si(111)上生长了Al_2O_3层。在Si(111)衬底上外延生长了非常光滑、均匀的Al_2O_3(111)预层膜。在Al_2O_3预制层上生长的γ-Al_2O_3薄膜表面非常光滑，Z范围接近3 nm。然而，没有Al_2O_3预制层生长的表面有许多与SiOx团簇有关的凸起结构，Z范围接近10 nm。Al_2O_3预涂覆层避免了生长初期N2O对硅衬底的刻蚀，证实了Al_2O_3预涂覆层对改善超薄γ-Al_2O_3薄膜的表面形貌是有效的。
We propose the formation of an Al2O3 pre-layer using a protective Si-oxide layer and an Al layer. Deposition of a thin layer of aluminum onto a Si surface covered with a thin Si-oxide layer and annealing at 800 degrees C led to the growth of Al2O3 layers on Si (111). A very smooth and uniform Al2O3 (111) pre-layer film was epitaxially grown on a Si (111) substrate. The surface of the gamma-Al2O3 film grown on the Al2O3 pre-layer was very smooth with a Z range of similar to 3 nm. However, the surface grown without the Al2O3 pre-layer had numerous convex structures concerning with SiOx clusters with a Z range of similar to 10 nm. Etching of the Si substrate by N2O gas could be avoided in the initial growth stage by the Al2O3 pre-layer It was confirmed that the Al2O3 pre-layer was effective in improving the surface morphology of the very thin gamma-Al2O3 films.