BAlN alloy for enhanced two-dimensional electron gas characteristics of GaN/AlGaN heterostructures
BAlN alloy for enhanced two-dimensional electron gas characteristics of GaN/AlGaN heterostructures
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BAlN合金增强了GaN/AlGaN异质结构的二维电子气体特性
DOI：
10.1088/1361-6463/aba4d5
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发表时间：
2020-07
期刊：
影响因子：
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通讯作者：
Rongyu Lin;Xinwei Liu;Kaikai Liu;Yi Lu;Xinke Liu;Xiaohang Li
中科院分区：
文献类型：
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作者：
Rongyu Lin;Xinwei Liu;Kaikai Liu;Yi Lu;Xinke Liu;Xiaohang Li
新兴的宽带隙BAlN合金具有改进III族氮化物功率器件的潜力，包括高电子迁移率晶体管（HEMT）。然而，很少有相关的研究已经进行。在这项工作中，我们已经研究了使用的B0.14Al0.86N合金的GaN缓冲层和AlGaN势垒在传统的GaN/AlGaN异质结构之间的中间层的一部分或全部。数值计算结果表明，通过用B0.14Al0.86N夹层或B0.14Al0.86N/AlN混合夹层代替传统的AlN夹层，二维电子气（2DEG）浓度得到了相当大的改善，并且2DEG泄漏到三元层中。因此，可以改善传输特性。饱和电流也可以被增强。例如，当VGS−Vth = +3 V时，具有0.5 nm B0.14Al0.86N/0.5 nm AlN混合中间层和1 nm B0.14Al0.86N中间层的HEMT的饱和电流比AlN中间层高5.8%和2.2%。
Emerging wide bandgap BAlN alloys have potential for improved III-nitride power devices, including high electron mobility transistors (HEMTs). Yet, few relevant studies have been carried out. In this work, we have investigated the use of the B0.14Al0.86N alloy as part or the entirety of the interlayer between the GaN buffer and the AlGaN barrier in the conventional GaN/AlGaN heterostructure. The numerical results show considerable improvement of the two-dimensional electron gas (2DEG) concentration with small 2DEG leakage into the ternary layer by replacing the conventional AlN interlayer by either the B0.14Al0.86N interlayer or the B0.14Al0.86N/AlN hybrid interlayer. Consequently, the transfer characteristics can be improved. The saturation current can be enhanced as well. For instance, the saturation currents for HEMTs with the 0.5 nm B0.14Al0.86N/0.5 nm AlN hybrid interlayer and the 1 nm B0.14Al0.86N interlayer are 5.8% and 2.2% higher than that for the AlN interlayer when VGS−Vth = +3 V.