Microwave Oscillator Based on a Single Straintronic Magnetotunneling Junction
Microwave Oscillator Based on a Single Straintronic Magnetotunneling Junction
复制标题
基于单应变电子磁隧道结的微波振荡器
DOI：
10.1103/physrevapplied.11.054069
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发表时间：
2019
影响因子：
4.6
通讯作者：
Supriyo Bandyopadhyay
中科院分区：
文献类型：
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作者：
Md Ahsanul Abeed;J. Drobitch;Supriyo Bandyopadhyay
在信息处理电路和系统中，人们对探索纳米磁性器件作为晶体管的潜在替代品有着极大的兴趣。一类特殊的纳米磁性器件采用多铁性材料，其磁化强度通过电产生的机械应变来切换，从而实现对磁性的电控制。应变电子磁隧道结（s - MTJ）就属于这一类。它们的软层由两相多铁性材料组成，包括一个磁致伸缩层和一个压电层弹性耦合在一起。在此，我们表明单个应变电子磁隧道结可作为一个无稳态多谐振荡器或微波弛豫振荡器（频率>1 GHz），而传统实现这种功能需要多个晶体管、电容器和电阻器。这减小了器件尺寸并提高了器件可靠性。这是纳米磁性器件的一种新应用，其中利用了磁性相互作用（s - MTJ软层中的形状各向异性、应变各向异性、偶极耦合场和自旋转移力矩之间的相互作用）来减小器件尺寸。
There is tremendous interest in exploring nanomagnetic devices as potential replacements for transistors in information processing circuits and systems. A special class of nanomagnetic devices employ multiferroics whose magnetizations are switched with electrically generated mechanical strain leading to electrical control of magnetism. Straintronic magneto-tunneling junctions (s-MTJ) belong to this category. Their soft layers are composed of two-phase multiferroics comprising a magnetostrictive layer elastically coupled to a piezoelectric layer. Here, we show that a single straintronic magneto-tunneling junction can act as an astable multivibrator or microwave relaxation oscillator (frequency > 1 GHz) whose traditional implementation would have required multiple transistors, capacitors and resistors. This reduces device footprint and improves device reliability. This is a new application of nanomagnetic devices where magnetic interactions (interaction between the shape anisotropy, strain anisotropy, dipolar coupling field and spin transfer torque in the soft layer of the s-MTJ) are exploited to reduce device footprint.