Characterization of amorphous hydrogenated carbon formed by low-pressure inductively coupled plasma enhanced chemical vapor deposition using multiple low-inductance antenna units.
Characterization of amorphous hydrogenated carbon formed by low-pressure inductively coupled plasma enhanced chemical vapor deposition using multiple low-inductance antenna units.
复制标题
使用多个低电感天线单元通过低压感应耦合等离子体增强化学气相沉积形成的非晶氢化碳的表征。
DOI：
10.1021/jp045412z
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发表时间：
2005
期刊：
影响因子：
--
通讯作者：
N. Sato
中科院分区：
文献类型：
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作者：
O. Tsuda;M. Ishihara;Y. Koga;S. Fujiwara;Y. Setsuhara;N. Sato
利用一种新型的具有多个低电感天线的高密度体积等离子体源系统，研究了氢化非晶碳的三维等离子体增强化学气相沉积(CVD)。对于总功率为400W、气压为0.1Pa的Ar等离子体，其体积PHI200 mm×100 mm的等离子体密度在横向+/-5%范围内为5.1×10(-3)cm(-3)，在轴向+/-10%范围内为5.2×10(10)cm(-3)。沉积在六面壁衬底上的a-C：H薄膜的厚度和折射率均匀度分别在+/-3.5%和+/-1%以内。在纯甲苯等离子体中，PHI60 mm×80 mm六方基座的顶部在压力下低至0.04Pa，总功率低至300W。此外，通过脉冲偏置精确控制的离子轰击，在拉曼和红外光谱中清晰地观察到了类聚合物结构向类金刚石结构的转变，并伴随着离子轰击引起的脱氢。此外，脉冲偏置技术在不显著降低硬度的情况下是一种有效的应力消除技术。在优化的沉积条件下，制备的2.0微米厚薄膜的应力为0.6 Gpa，硬度为15 Gpa。该薄膜可用于20N高载荷下的摩擦学试验，循环次数可达20000次以上，比磨损率和摩擦系数分别为1.2×10(-7)mm3/Nm和0.04。
Three-dimensional plasma enhanced chemical vapor deposition (CVD) of hydrogenated amorphous carbon (a-C:H) has been demonstrated using a new type high-density volumetric plasma source with multiple low-inductance antenna system. The plasma density in the volume of phi 200 mm x 100 mm is 5.1 x 10(10) cm(-3) within +/-5% in the lateral directions and 5.2 x 10(10)cm(-3) within +/-10% in the axial direction for argon plasma under the pressure of 0.1 Pa and the total power as low as 400 W. The uniformity of the thickness and refractive index is within +/-3.5% and +/-1%, respectively, for the a-C:H films deposited on the substrates placed on the six side walls, the top of the phi 60 mm x 80 mm hexagonal substrate holder in the pure toluene plasma under the pressure is as low as 0.04 Pa, and the total power is as low as 300 W. It is also found that precisely controlled ion bombardment by pulse biasing led to the explicit observation in Raman and IR spectra of the transition from polymer-like structure to diamond-like structure accompanied by dehydrogenation due to ion bombardment. Moreover, it is also concluded that the pulse biasing technique is effective for stress reduction without a significant degradation of hardness. The stress of 0.6 GPa and the hardness of 15 GPa have been obtained for 2.0 microm thick films deposited with the optimized deposition conditions. The films are durable for the tribology test with a high load of 20 N up to more than 20,000 cycles, showing the specific wear rate and the friction coefficient were 1.2 x 10(-7) mm3/Nm and 0.04, respectively.