Rapid imaging of misfit dislocations in SiGe/Si in cross-section and through oxide layers using electron channeling contrast
Rapid imaging of misfit dislocations in SiGe/Si in cross-section and through oxide layers using electron channeling contrast
复制标题
使用电子沟道对比度对 SiGe/Si 中横截面和氧化层中的失配位错进行快速成像
DOI：
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发表时间：
2017
期刊：
影响因子：
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通讯作者：
D. Sadana
中科院分区：
文献类型：
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作者：
K. Mukherjee;B. Wacaser;S. Bedell;D. Sadana
电子通道对比成像(ECCI)是一种在扫描电子显微镜中对单个晶体缺陷进行快速和高分辨率表征的技术。然而，ECCI在半导体材料中的应用仅限于平面图几何图形中的裸样。本文介绍了与半导体制造和失效分析有关的两种方法：(1)利用电子回旋共振成像(ECCI)揭示硅上生长的SiGe成分梯度缓冲层解理截面上的失配位错缺陷；(2)非晶氧化层覆盖的变质SiGe/Si层中失配位错的平面图成像，其中量化了氧化层造成的对比度部分损失，并研究了束流加速电压的影响。这些结果表明，ECCI在大面积无损检测晶体缺陷方面具有很强的能力，这对生产过程中的衬底质量控制是非常必要的。
Electron channeling contrast imaging (ECCI) is emerging as a technique for rapid and high-resolution characterization of individual crystalline defects in a scanning electron microscope. However, the application of ECCI to semiconductor materials has been limited to bare samples in plan-view geometry. In this paper, two modalities of this technique are demonstrated with relevance to semiconductor manufacturing and failure analysis: (1) The use of ECCI to reveal misfit dislocation defects along a cleaved cross-section of a SiGe compositionally graded buffer grown on Si and (2) plan-view imaging of misfit dislocations in metamorphic SiGe/Si layers covered by amorphous oxide layers, where the partial loss of contrast due to the oxide layers is quantified and the effect of the beam accelerating voltage is studied. These results demonstrate the power of ECCI in inspecting crystallographic defects non-destructively over large areas, which is highly desirable for substrate quality control in manufacturing of pro...