Chemistry of semiconductor clusters: Large silicon clusters are much less reactive towards oxygen than the bulk
Chemistry of semiconductor clusters: Large silicon clusters are much less reactive towards oxygen than the bulk
复制标题
半导体团簇的化学性质:大的硅团簇对氧的反应性比块体小得多
DOI:
10.1063/1.459595
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发表时间:
1990
期刊:
影响因子:
--
通讯作者:
K. Creegan
中科院分区:
文献类型:
--
作者:
M. Jarrold;U. Ray;K. Creegan
The chemical reactions of Si+n (n=10–65) with O2 have been investigated using selected ion drift tube techniques. The smaller clusters are etched by O2 to give Si+n−2 (and two SiO molecules) and the larger clusters chemisorb oxygen forming an SinO+2 adduct. The transition occurs between n=29 and 36 under the conditions employed. There are large variations in the reactivity of the smaller clusters: Si+13, Si+14, and Si+23 are particularly inert. The variations in reactivity are rapidly damped with increasing cluster size and for clusters with 40–65 atoms the reactivity is nearly independent of size. However, these large clusters are ∼102 times less reactive towards O2 than most bulk silicon surfaces. Studies of the temperature dependence of the reactions reveal that they proceed through a metastable precursor state which is probably molecular O2 physisorbed to the cluster surface. Variations in the size of the activation barrier for dissociative chemisorption account for the changes in reactivity with clus...