In situ Raman characterization of reversible phase transition in stress-induced amorphous silicon
In situ Raman characterization of reversible phase transition in stress-induced amorphous silicon
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DOI：
10.1063/1.2779933
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发表时间：
2007-09
影响因子：
4
通讯作者：
Kehui Wu;X. Yan;Mingwei Chen
中科院分区：
文献类型：
--
作者：
Kehui Wu;X. Yan;Mingwei Chen
作者报道了激光加热下应力诱导非晶硅的可逆相变。原位拉曼表征表明，在~ 400°C退火时，非晶硅析出亚稳晶相，随后在室温冷却后消失。这种不寻常的可逆相变很可能与应力诱导非晶硅的独特原子结构和非晶压痕内的高残余应力有关。
The authors report a reversible phase transition of stress-induced amorphous silicon subjected to laser heating. In situ Raman characterization suggested that a metastable crystalline phase precipitates from the amorphous silicon upon annealing at ∼400°C and vanishes after subsequent cooling at room temperature. The unusual reversible phase transition is most likely associated with the unique atomic structure of stress-induced amorphous silicon and high residual stresses within amorphous imprints.