Nitride-based stacked laser diodes with a tunnel junction

Nitride-based stacked laser diodes with a tunnel junction
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具有隧道结的氮化物堆叠激光二极管

DOI：
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发表时间：
2017
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通讯作者：
H. Yoshida
H. Yoshida
中科院分区：
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文献类型：
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作者：
Satoru Okawara;Yuta Aoki;M. Kuwabara;Y. Takagi;J. Maeda;H. Yoshida

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我们首次报道了具有隧道结的氮化物基双叠层半导体激光器。叠层激光二极管是通过金属有机物气相外延单片生长的。确认了具有394 nm发射波长的两叠层InGaN/GaN多量子阱激光二极管在脉冲电流模式下表现出峰值输出功率超过10 W的激光振荡。器件的上下发射极分别能够在2.4和5.2 A的不同阈值电流下发射激光，斜率效率分别为0.8和0.3 W/A。
We report on nitride-based two-stack laser diodes with a tunnel junction for the first time. The stacked laser diode was monolithically grown by metalorganic vapor phase epitaxy. It was confirmed that the two-stack InGaN/GaN multiple-quantum-well laser diode with an emission wavelength of 394 nm exhibited laser oscillation up to a peak output power of over 10 W in the pulsed current mode. The upper and lower emitters of the device were capable of lasing at different threshold currents of 2.4 and 5.2 A with different slope efficiencies of 0.8 and 0.3 W/A, respectively.