Fabrication and functionalization of nanochannels by electron-beam-induced silicon oxide deposition
Fabrication and functionalization of nanochannels by electron-beam-induced silicon oxide deposition
复制标题
DOI：
10.1021/la061321c
复制
发表时间：
2006-12-05
期刊：
影响因子：
3.9
通讯作者：
Vogel, Horst
中科院分区：
文献类型：
--
作者：
Danelon, Christophe;Santschi, Christian;Vogel, Horst
本文报道了低应力氮化硅膜中功能化固态纳米孔的制备和电学表征。首先，使用聚焦离子束技术钻出直径约为50 nm的小孔，然后局部沉积二氧化硅。低能电子束诱导吸附的正硅酸乙酯的分解，通过形成高绝缘的氧化硅，导致纳米孔的位置选择性官能化。沉积是一层一层地进行的，这允许以亚纳米精度控制最终直径。通过扫描电子显微镜可以实时监测孔径的变化。记录的流经单个纳米孔的离子电流显示，离子传导性质与施加电势的符号不对称。在负电压下观察到的低频超额噪声来源于开孔的阶跃电导波动。
We report on the fabrication and electrical characterization of functionalized solid-state nanopores in low stress silicon nitride membranes. First, a pore of similar to 50 nm diameter was drilled using a focused ion beam technique, followed by the local deposition of silicon dioxide. A low-energy electron beam induced the decomposition of adsorbed tetraethyl orthosilicate resulting in site-selective functionalization of the nanopore by the formation of highly insulating silicon oxide. The deposition occurs monolayer by monolayer, which allows for control of the final diameter with subnanometer accuracy. Changes in the pore diameter could be monitored in real time by scanning electron microscopy. Recorded ion currents flowing through a single nanopore revealed asymmetry in the ion conduction properties with the sign of the applied potential. The low-frequency excess noise observed at negative voltage originated from stepwise conductance fluctuations of the open pore.