Modulating the field-effect passivation at the SiO2/c-Si interface: Analysis and verification of the photoluminescence imaging under applied bias method
Modulating the field-effect passivation at the SiO2/c-Si interface: Analysis and verification of the photoluminescence imaging under applied bias method
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DOI：
10.1063/1.4827417
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发表时间：
2013-11
影响因子：
3.2
通讯作者：
H. Haug;S. Olibet;Ørnulf Nordseth;E. Marstein
中科院分区：
文献类型：
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作者：
H. Haug;S. Olibet;Ørnulf Nordseth;E. Marstein
本文研究了表面能带弯曲受控的热氧化硅片的表面钝化特性，采用了一种新开发的表征技术，该技术结合了校准的光致发光成像和施加在背面钝化层上的外部电压。讨论了该技术的各个方面以及在确定有效表面复合速度时可能存在的误差，包括横向载流子扩散、漏电流和与所研究样品上存在的金属电极有关的光学效应。为了定量描述SiO_2/c-Si界面的复合活性和氧化层中固定电荷的影响，在扩展的Shockley-Read-Hall复合模型的框架下，分析了测量的有效载流子寿命-电压曲线。并与微波探测光导衰减法的相应结果进行了比较。
In this paper, we study the surface passivation properties of thermally oxidized silicon wafers with controlled surface band bending, using a recently developed characterization technique combining calibrated photoluminescence imaging with the application of an external voltage over the rear side passivation layer. Various aspects of the technique and possible errors in the determination of the effective surface recombination velocity are discussed, including lateral carrier diffusion, leakage currents, and optical effects related to the presence of metal electrodes on the investigated samples. In order to quantitatively describe the recombination activity at the SiO2/c-Si interface and the effect of fixed charges in the oxide layer, the measured effective carrier lifetime vs. voltage curves have been analyzed in the framework of an extended Shockley-Read Hall recombination model. Furthermore, the results have been compared with corresponding results from microwave detected photoconductance decay measurem...