High-performance nonhydrogenated nickel-induced laterally crystallized P-channel poly-Si TFTs
High-performance nonhydrogenated nickel-induced laterally crystallized P-channel poly-Si TFTs
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DOI：
10.1109/led.2005.859625
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发表时间：
2005-12
影响因子：
4.9
通讯作者：
Young-Cheol Lee;S. Bae;S. Fonash
中科院分区：
文献类型：
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作者：
Young-Cheol Lee;S. Bae;S. Fonash
高性能的镍诱导横向结晶（NILC）的p沟道多晶硅薄膜晶体管（TFT）已被制造无氢化。选择两种不同厚度的Ni种子层来制作高性能的p型TFT。非常薄的种子层（例如，5 /spl Aring/）的情况相比于60 /spl Aring/ Ni晶种层的情况导致在介电常数（Gm）和阈值电压（V/sub th/）方面略微更好的性能。然而，通过非常薄的Ni晶种结晶的p型多晶硅TFT导致晶体管之间的V/sub th/和G/sub m/两者的更多变化。据信，与60-/spl Aring/NILC TFT相比，沿沟道沿着横向生长的多晶晶粒的数量的差异导致在5-/spl Aring/ NILC TFT之间看到的变化。60 /spl Aring/ NILC非氢化TFT显示出一致的高性能，即，典型的电特性具有156 cm/sup 2/V-S的线性场效应空穴迁移率、0.16 V/dec的亚阈值摆幅、-2.2 V的V/sub th/、>10/sup 8/的开关比、以及当V/sub d/等于-0.1 V时<1/spl乘以/10/sup-14/ A//spl μ/m的截止电流。
High-performance nickel-induced laterally crystallized (NILC) p-channel poly-Si thin-film transistors (TFTs) have been fabricated without hydrogenation. Two different thickness of Ni seed layers are selected to make high-performance p-type TFTs. A very thin seed layer (e.g., 5 /spl Aring/) leads to marginally better performance in terms of transconductance (Gm) and threshold voltage (V/sub th/) than the case of a 60 /spl Aring/ Ni seed layer. However, the p-type poly-Si TFTs crystallized by the very thin Ni seeding result in more variation in both V/sub th/ and G/sub m/ from transistor to transistor. It is believed that differences in the number of laterally grown polycrystalline grains along the channel cause the variation seen between 5 /spl Aring/ NILC TFTs compared to 60-/spl Aring/ NILC TFTs. The 60 /spl Aring/ NILC nonhydrogenated TFTs show consistent high performance, i.e., typical electrical characteristics have a linear field-effect hole mobility of 156 cm/sup 2//V-S, subthreshold swing of 0.16 V/dec, V/sub th/ of -2.2 V, on-off ratio of >10/sup 8/, and off-current of <1/spl times/10/sup -14/ A//spl mu/m when V/sub d/ equals -0.1 V.