Properties of nitrogen-implanted p-type ZnO films grown on Si3N4/Si by radio-frequency magnetron sputtering
Properties of nitrogen-implanted p-type ZnO films grown on Si3N4/Si by radio-frequency magnetron sputtering
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DOI：
10.1063/1.1763640
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发表时间：
2004-06-14
影响因子：
4
通讯作者：
Lee, HY
中科院分区：
文献类型：
--
作者：
Lin, CC;Chen, SY;Lee, HY
采用射频磁控溅射法在Si衬底上生长了注氮p型ZnO薄膜。与Si上的ZnO相比，Si3N4缓冲层可以有效地改善薄膜的化学计量比，减少氧空位的形成。用5 × 10~（12）~1 × 10~（14）cm~（-2）N~+注入p型ZnO薄膜，其空穴浓度为5.0 × 10~（16）~7.3 × 10~（17）cm~（-3），空穴迁移率为2.51-6.02 cm~（2）/Vs，电阻率为10.11-15.3 Ω cm。p型ZnO薄膜在室温下具有良好的结晶性和3.30 eV附近的强紫外发射峰。此外，通过扩展的X射线吸收精细结构分析证明，p型ZnO薄膜的局部结构发生了变化，由于在p型ZnO薄膜中的氧离子的氮离子的替代。我们在Si_3N_4/Si衬底上生长的p型ZnO薄膜的发现为在硅衬底上制备可重复的p型ZnO薄膜提供了一种简单的方法，可用于大规模光电集成器件的开发。(C)2004年，美国物理学会。
An nitrogen-implanted p-type ZnO film has been grown on a Si substrate buffered with Si3N4 using radio-frequency magnetron sputtering. The Si3N4 buffer layer can effectively improve film stoichiometry and reduce the formation of oxygen vacancies compared to ZnO on Si. The electrical properties of the p-type ZnO films implanted with 5x10(12)-1x10(14) cm(-2) N+ dose show a hole concentration of 5.0x10(16)-7.3x10(17) cm(-3), hole mobility of 2.51-6.02 cm(2)/V s, and resistivity of 10.11-15.3 Omega cm. The p-type ZnO films also showed an excellent crystallinity and a strong ultraviolet emission peak near 3.30 eV at room temperature. Moreover, as evidenced by extended x-ray absorption fine structure analysis, the local structure of the p-type ZnO films was changed due to the substitution of nitrogen ions for oxygen ions in p-type ZnO films. Our finding of p-type ZnO films grown on a Si3N4/Si substrate could provide a simple method to fabricate reproducible p-type ZnO films on silicon substrate for the development of large-scale optoelectronic integration device. (C) 2004 American Institute of Physics.