Evolution of precursor in the epitaxial CeO2 films grown by chemical solution deposition
Evolution of precursor in the epitaxial CeO2 films grown by chemical solution deposition
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DOI：
10.1016/j.jeurceramsoc.2014.10.003
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发表时间：
2015-03
影响因子：
5.7
通讯作者：
L. Jin;Jing Feng;Z. Yu;C. Li;S. N. Zhang;Yuxiao Wang;Huanting Wang;Ping-xiang Zhang
中科院分区：
文献类型：
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作者：
L. Jin;Jing Feng;Z. Yu;C. Li;S. N. Zhang;Yuxiao Wang;Huanting Wang;Ping-xiang Zhang
在Ni-5at表面生长了ceo2薄膜。以新型丙酸铈为前驱体，采用化学溶液沉积法制备%W衬底。与传统溶液相比，新型前驱体溶液不发生化学反应，具有更高的稳定性。纯丙酸铈在低温下可促进分解过程形成中间非晶相。纯丙酸铈的初始结晶温度明显低于传统溶液，这可能与不同的分解行为有关。在新溶液中，ceo2相在~ 800℃开始结晶，已经表现出双轴织构。ceo_2薄膜（T= ~ 900°C）表面光滑，具有良好的面内和面外织构，FWHM值分别为4.8°和6.7°。结果表明，该前驱体制备的ceo_2薄膜可用于制备其他缓冲层和YBa2Cu3Oylayer。
CeO2films were grown on the Ni-5at.%W substrates by chemical solution deposition using novel cerium propionate as a precursor. In comparison with traditional solution, the new precursor solution exhibited higher stability since no chemical reaction was involved. Pure cerium propionate could promote the decomposition process to form the intermediate amorphous phase at low temperature. The initial crystallization temperature of pure cerium propionate was obviously lower than that of traditional solution, which could be associated with the different decomposition behaviors. Within the new solution, the CeO2phase started to crystallize at ∼800 °C, which already showed the biaxial texture. The CeO2film (T= ∼900 °C) exhibited a smooth surface and very good in-plane and out-of-plane textures with the FWHM values of 4.8° and 6.7°. The results suggest that CeO2film fabricated by the newly developed precursor route may be suitable for the fabrication of other buffer layer and YBa2Cu3Oylayer.