Photoluminescence of Ge∕Si structures grown on oxidized Si surfaces
Photoluminescence of Ge∕Si structures grown on oxidized Si surfaces
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DOI：
10.1063/1.2189113
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发表时间：
2006-03
影响因子：
4
通讯作者：
A. Shklyaev;S. Nobuki;S. Uchida;Y. Nakamura;M. Ichikawa
中科院分区：
文献类型：
--
作者：
A. Shklyaev;S. Nobuki;S. Uchida;Y. Nakamura;M. Ichikawa
用光致发光（PL）方法研究了氧化硅表面生长的锗闪烁硅结构。高温退火的结构导致其PL强度增加至少一个数量级的能量约0.82eV。有人建议，松弛的应变，存在于我们的结构中，由于Ge scinSi晶格失配，发生通过形成的缺陷，如间隙簇在Si层盖层的Ge岛。这些缺陷与硅氧化物膜的其余部分的氧络合物一起提供D1范围内的强PL。
Ge∕Si structures grown on oxidized Si surfaces are studied by means of photoluminescence (PL). High-temperature annealing of the structures leads to the increase of their PL intensity by at least one order of magnitude at energies around 0.82eV. It is suggested that relaxation of strain, existing in our structures due to the Ge∕Si lattice mismatch, occurs through the formation of defects such as interstitial clusters in the Si layer capping the layer of Ge islands. These defects in conjunction with oxygen complexes of the rest of the Si oxide film provide the intense PL in the D1 range.