Physics of Semiconductor Devices
Physics of Semiconductor Devices
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DOI：
10.1049/ep.1970.0039
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发表时间：
1970
期刊：
影响因子：
--
通讯作者：
G. Pridham
中科院分区：
文献类型：
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作者：
G. Pridham
虽然不会减损半导体的物理和性质的简历，但最突出的部分是那些现有信息大多在学术团体的各种会议记录中的部分。这包括微波器件，如IMPATT二极管和Gunn-Eflect振荡器、光电子器件和结激光器。大约1000篇参考文献增加了文本的价值。只要读者对半导体理论有基本的了解，这本书是值得进一步学习的。
While not detracting from the resume of the physics and properties of semiconductors, the sections that stand out are those where much of the existing information is in the various proceedings of learned societies. This includes microwave devices, such as IMPATT diodes and Gunn-eflfect oscillators, optoelectronic devices and junction lasers. About 1000 references increase the value of the text. With the proviso that the reader has the understanding of semiconductor theory necessary for a first degree, this book can be highly recommended tor further study.