In-Depth Analysis on Radiation Induced Multi-Level Dark Current Random Telegraph Signal in Silicon Solid State Image Sensors
In-Depth Analysis on Radiation Induced Multi-Level Dark Current Random Telegraph Signal in Silicon Solid State Image Sensors
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DOI：
10.1109/tns.2016.2633333
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发表时间：
2017-01-01
影响因子：
1.8
通讯作者：
Rubaldo, Laurent
中科院分区：
文献类型：
--
作者：
Durnez, Clementine;Goiffon, Vincent;Rubaldo, Laurent
辐射诱发现象是空间应用图像传感器的一个重要问题。粒子（如质子或电子）可以影响探测器的晶体结构，并在暗响应中产生开关。这可能是一个问题，特别是对于校准等图像质量。本文旨在表达用于开关检测的方法，并显示这些随机电报信号（RTS）的一些属性，其中包括它们的幅度，离散电平和开关时间。这些结果的第一个分析也给出。
Radiation-induced phenomena constitute a big concern for image sensors dedicated to space application. Particles (such as protons or electrons) can impact the crystalline structure of the detector and create switches in the dark response. This may be a problem, especially for calibration and so on image quality. This article aims at expressing the method used for switch detection and showing some properties of these Random Telegraph Signals (RTS), concerning, among other things, their amplitudes, discrete levels, and switching times. A first analysis of these results is also given.