Getting high-efficiency photoluminescence from Si nanocrystals in SiO2 matrix
Getting high-efficiency photoluminescence from Si nanocrystals in SiO2 matrix
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DOI：
10.1063/1.1525395
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发表时间：
2002-11
影响因子：
4
通讯作者：
Yudan Wang;G. Kong;Weixi Chen;H. Diao;Chang-Nan Chen;Si-jia Zhang;X. Liao
中科院分区：
文献类型：
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作者：
Yudan Wang;G. Kong;Weixi Chen;H. Diao;Chang-Nan Chen;Si-jia Zhang;X. Liao
采用等离子体增强化学气相沉积法制备了SiO2基体中的硅纳米晶。研究了薄膜的结构和光致发光（PL）随沉积温度的变化。当沉积温度从250 °C降低到室温时，PL效率大幅提高高达12%。发现低温沉积导致高质量的最终结构的薄膜中的硅纳米晶体是几乎无应变，和Si/SiO2界面尖锐。薄膜的上级结构和光学性质的展示代表了硅基发光体发展的重要一步。
Silicon nanocrystals in SiO2 matrix are fabricated by plasma enhanced chemical vapor deposition followed by thermal annealing. The structure and photoluminescence (PL) of the resulting films is investigated as a function of deposition temperature. Drastic improvement of PL efficiency up to 12% is achieved when the deposition temperature is reduced from 250 °C to room temperature. Low-temperature deposition is found to result in a high quality final structure of the films in which the silicon nanocrystals are nearly strain-free, and the Si/SiO2 interface sharp. The demonstration of the superior structural and optical properties of the films represents an important step towards the development of silicon-based light emitters.