Indium sulfide and relatives in the world of photovoltaics
Indium sulfide and relatives in the world of photovoltaics
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DOI：
10.1016/j.solener.2008.08.008
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发表时间：
2009-03-01
期刊：
影响因子：
6.7
通讯作者：
Barreau, N.
中科院分区：
文献类型：
--
作者：
Barreau, N.
用多种技术生长的含铟硫化物的铜(In，Ga)Se-2太阳能电池已经达到了与用(CBD)Cd作缓冲的标准器件所达到的效率相当的效率。本文首先回顾了硫化铟单晶的一些性质，指出了文献中对薄膜性质的不同看法。其次，介绍了文件硫化铟中某些“外来元素”的存在对其性能的影响。结果表明，即使在较低的浓度水平，这些“外来元素”也可能是起源的，或者薄膜的性质与单晶相比有偏差。最后讨论了这些污染物对太阳电池性能的影响。(C)2008爱思唯尔有限公司。保留所有权利。
Cu(In,Ga)Se-2-based solar cells buffered with indium sulfide grown by numerous techniques have reached efficiencies comparable to those achieved by standard devices buffered with (CBD)CdS. The present paper firstly recalls some of the properties of the indium sulfide single crystal and Points Out the disagreements concerning the thin films properties inventoried in the literature. Secondly, the influence of the presence of some "foreign elements" within file indium sulfide on its properties is presented. It is shown that these "foreign elements", even at low concentration levels, are possibly at the origin or the thin films properties deviations compared to the single crystal. The impact of these contaminants on the solar cells performance is finally discussed. (c) 2008 Elsevier Ltd. All rights reserved.