Localization in silicon nanophotonic slow-light waveguides
Localization in silicon nanophotonic slow-light waveguides
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DOI：
10.1038/nphoton.2007.278
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发表时间：
2008-02-01
期刊：
影响因子：
35
通讯作者：
Bandaru, Prabhakar R.
中科院分区：
文献类型：
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作者：
Mookherjea, Shayan;Park, Jung S.;Bandaru, Prabhakar R.
减慢芯片上的光可以导致光学缓冲器(1)、滤光器(2，3)和存储元件(4)的发展，这些光学缓冲器(1)、滤光器(2，3)和存储元件(4)可用于光学互连和共振增强的基于芯片的非线性光学(5，6)。慢光的几种方法依赖于一系列耦合谐振器(1-4，7-11)中的光干涉现象；然而，在无序结构中，光干涉也对光的局部化负责，这种影响在一维设备中特别突出(12，13)。到目前为止，所研究的波导长度一直小于局域化长度。在这里，我们首次观察到由长序列耦合谐振器组成的紧凑型硅纳米光子慢光波导中的光局域化现象。我们的结果表明，无序限制了光能被减慢的程度，而局域化导致了准一维波导中接近带边波长的空间集中和局部囚禁光。
Slowing down light on a chip can lead to the development of optical buffers(1), filters(2,3) and memory elements(4) useful for optical interconnects and for resonantly enhanced chip-based nonlinear optics(5,6). Several approaches to slow light rely on the phenomenon of light interference in a sequence of coupled resonators(1-4,7-11); however, light interference is also responsible, in disordered structures, for the localization of light, an effect particularly prominent in one-dimensional devices(12,13). Until now, the length of the waveguides investigated has been less than the localization length. Here we report the first observation of light localization in compact silicon nanophotonic slow-light waveguides consisting of long sequences of coupled resonators. Our results show that disorder limits how much light can be slowed, and that localization leads to spatially concentrated and locally trapped light in a quasi-one-dimensional waveguide at wavelengths near the band edge.