Spatial alignment evolution of self-assembled In0.4Ga0.6As island arrays grown on GaAs (3 1 1)B surface by atomic hydrogen-assisted molecular beam epitaxy
Spatial alignment evolution of self-assembled In0.4Ga0.6As island arrays grown on GaAs (3 1 1)B surface by atomic hydrogen-assisted molecular beam epitaxy
复制标题
原子氢辅助分子束外延在GaAs(3 1 1)B表面生长的自组装In0.4Ga0.6As岛阵列的空间排列演化
DOI：
10.1016/s0169-4332(01)00741-3
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发表时间：
2001
影响因子：
6.7
通讯作者：
M. Kawabe
中科院分区：
文献类型：
--
作者：
H. Xu;K. Akahane;H. Z. Song;Y. Okada;M. Kawabe
摘要自组装In 0. 4Ga 0。采用原子氢辅助分子束外延（H-MBE）技术在（3 1 1）B GaAs衬底上生长了6 As岛阵列。通过原子力显微镜（AFM）分析了沉积过程中表面形貌的演变过程，并通过二维快速傅里叶变换（2DFFT）分析了AFM图像中横向有序的发展。结果表明，InGaAs岛以近乎完美的二维正方形晶格排列，两侧平行于[0 1− 1]和[− 2 3 3]方位角。岛的这种排列与GaAs（3 1 1）B衬底的体弹性模量的各向异性一致。
Abstract Self-assembled In0. 4Ga0. 6As island arrays have been grown on (3 1 1) B GaAs substrates by using atomic hydrogen-assisted molecular beam epitaxy (H-MBE). The evolution process of surface morphology with deposition has been analyzed by atomic force microscopy (AFM) and the development of lateral ordering has been highlighted by two-dimensional fast Fourier transformation (2DFFT) analysis of the AFM images. It is revealed that the InGaAs islands are arranged in nearly perfect two-dimensional (2D) square-like lattice with two sides parallel to [0 1− 1] and [− 2 3 3] azimuths. Such an alignment of islands is coincident with the anisotropy of bulk elastic modulus of the GaAs (3 1 1) B substrate.