Improved DC performance and current stability of ultrathin-Al2O3/InAlN/GaN MOS-HEMTs with post-metallization-annealing process
Improved DC performance and current stability of ultrathin-Al2O3/InAlN/GaN MOS-HEMTs with post-metallization-annealing process
复制标题
采用金属化后退火工艺提高超薄 Al2O3/InAlN/GaN MOS-HEMT 的直流性能和电流稳定性
DOI：
10.1088/1361-6641/ab708c
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发表时间：
2020
期刊：
影响因子：
--
通讯作者：
and T. Hashizume
中科院分区：
文献类型：
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作者：
S. Ozaki;K. Makiyama;T. Ohki;N. Okamoto;Y. Kumazaki;J. Kotani;S. Kaneki;K. Nishiguchi;N. Nakamura;N. Hara;and T. Hashizume
通过研究Al_2O_3/InAlN界面特性，研究了1 nm厚超薄Al_2O_3的InAlN/GaN金属氧化物半导体高电子迁移率晶体管(MOS-HEMTs)的后金属化-退火(PMA)工艺对漏电流稳定性的影响。我们阐明了PMA对直流特性(漏电流、导通电阻和跨导)的改善归因于方阻(Rsh)的降低，并且由于Al2 O3/InAlN界面电子态的减少，用脉冲I-V特性评价的电流崩塌被有效地抑制了。对Al_2O_3/InAlN结构的透射电子显微镜分析表明，PMA处理后Al_2O_3/InAlN界面的无序状态明显恢复。结果表明，PMA工艺有效地改善了Al2 O3/InAlN界面的悬挂键和/或点缺陷的弛豫，改善了Al2 O3/InAlN/GaN MOS-HEMTs的直流性能和电流稳定性。
We evaluated the effect of the post-metallization-annealing (PMA) process on drain current stability of InAlN/GaN metal-oxide-semiconductor high electron mobility transistors (MOS-HEMTs) with a 1 nm thick ultrathin-Al 2 O 3, by focusing on the Al 2 O 3/InAlN interface properties. We clarified that the improvement in DC characteristics (drain current, on-state resistance, and transconductance) with PMA was attributed to the decrease in sheet resistance (R sh), and the current collapse evaluated by pulsed I–V characteristics was effectively suppressed, because of the reduction in the electronic states at the Al 2 O 3/InAlN interface. Transmission electron microscope analysis of the Al 2 O 3/InAlN structures revealed that the bond disorder at the Al 2 O 3/InAlN interface was significantly recovered after PMA. It is considered that the PMA process is effective in enhancing the relaxation of dangling bonds and/or point defects at the Al 2 O 3/InAlN interface, leading to the improved DC performance and current stability for the Al 2 O 3/InAlN/GaN MOS-HEMTs.