Regulating Eu2+ Multisite Occupation through Structural Disorder toward Broadband Near-Infrared Emission
Regulating Eu2+ Multisite Occupation through Structural Disorder toward Broadband Near-Infrared Emission
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DOI：
10.1021/acs.chemmater.2c03631
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发表时间：
2023-01
影响因子：
8.6
通讯作者：
Yingze Zhu;Xuesong Wang;Jianwei Qiao;M. Molokeev;H. Swart;Lixin Ning;Z. Xia
中科院分区：
文献类型：
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作者：
Yingze Zhu;Xuesong Wang;Jianwei Qiao;M. Molokeev;H. Swart;Lixin Ning;Z. Xia
为了促进近红外（NIR）光源在光电和生物医学应用中的发展，近红外发射荧光粉材料及其设计原理的发现至关重要。在此，我们报道了一种新型Eu2+激活的宽带近红外发射荧光粉BaSrGa4O8:Eu2+，其具有由于Ba/Sr和氧位点占据无序而导致的多位点占据。随着Ba/Sr原子比从1:1增加到1.7:0.3，Eu2+发射带最大红移从670 nm到775 nm，半峰全宽（FWHM）从140 nm扩大到230 nm。使用密度泛函理论计算阐明了结构-性能关系的基本机制。演示了近红外荧光粉转换发光二极管（pc-LED）的应用，展示了其在夜视技术中的潜力。我们的结果可以进一步利用主体结构紊乱来实现 Eu2+ 宽带近红外发光，以应用于 pc-LED。
To promote the development of near-infrared (NIR) light sources in optoelectronic and biomedical applications, the discovery of NIR-emitting phosphor materials and their design principles are essential. Herein, we report a novel Eu2+-activated broadband NIR-emitting phosphor, BaSrGa4O8:Eu2+, which features multisite occupation due to Ba/Sr and oxygen site occupancy disorder. With an increase in the Ba/Sr atomic ratio from 1:1 to 1.7:0.3, the Eu2+emission band maximum red-shifts from 670 to 775 nm, along with an enlargement of the full width at half-maximum (FWHM) from 140 to 230 nm. The underlying mechanism for the structure–property relationship is elucidated using density functional theory calculations. The application of the NIR phosphor-converted light-emitting diodes (pc-LEDs) is demonstrated, showing their potential in night-vision technology. Our results can initiate further exploitation of the host structural disorder toward Eu2+broadband NIR luminescence for applications in pc-LEDs.