Effects of twins on the electronic properties of GaAs
Effects of twins on the electronic properties of GaAs
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DOI：
10.1063/1.4811746
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发表时间：
2013-07
影响因子：
4
通讯作者：
K. Shimamura;Z. Yuan;F. Shimojo;A. Nakano
中科院分区：
文献类型：
--
作者：
K. Shimamura;Z. Yuan;F. Shimojo;A. Nakano
在半导体纳米线的生长过程中产生的孪晶缺陷是一个主要的问题，但它们对电子性质的影响还没有很好的理解。在这里，结合量子力学和分子动力学模拟表明，由于孪晶，激子的辐射衰减时间增加。此外，孪生散射的贡献，电子迁移率被发现是显着的，符合光电导测量。除了作为一个载流子散射源，双胞胎在纳米线被发现修改的流动性，通过改变应变，从而有效质量。这些效应应该对基于MEMS器件的效率产生深远的影响。
Generation of twin defects during the growth of semiconductor nanowires is a major concern, but their effects on electronic properties are not well understood. Here, combined quantum-mechanical and molecular-dynamics simulations reveal that the radiative decay time of an exciton increases due to twin. Furthermore, the twin-scattering contribution to electron mobility is found to be significant, in conformity with photoconductivity measurements. In addition to acting as a carrier-scattering source, twins in nanowires are found to modify the mobility by changing strain and thereby the effective mass. These effects should have profound impacts on the efficiency of nanowire-based devices.