High-temperature active/passive oxidation and bubble formation of CVD SiC in O2 and CO2 atmospheres
High-temperature active/passive oxidation and bubble formation of CVD SiC in O2 and CO2 atmospheres
复制标题
DOI：
10.1016/s0955-2219(02)00139-5
复制
发表时间：
2002-01-01
影响因子：
5.7
通讯作者：
Homma, H
中科院分区：
文献类型：
--
作者：
Goto, T;Homma, H
在1650 ~ 2000 K温度范围内，研究了CVD SiC在O-2和CO2中的主动氧化、被动氧化和气泡形成过程。在O-2中的活性氧化速率随着氧分压（P-O2）的增加而增加，然而，在CO2中的活性氧化速率在特定的P-O2下显示出最大值。O2中的钝化氧化动力学随温度和P-O2的变化呈线性-抛物线或抛物线型，而CO2中的钝化氧化动力学始终呈抛物线型。抛物线氧化在O-2和CO2中的活化能分别为210和150 kJ/mol，表明在这些气氛中的不同的速率决定过程。气泡的形成受温度和P-O2的控制，与氧化剂气体种类无关。气泡的形成加速了线性和抛物线氧化速率。(C)2002爱思唯尔科技有限公司版权所有。
The active oxidation, passive oxidation and bubble formation of CVD SiC were studied in O-2 and CO2 at temperatures from 1650 to 2000 K. The active oxidation rates in O-2 increased with increasing oxygen partial pressure (P-O2); however, those in CO2 showed the maxima at specific P-O2. The passive oxidation kinetics in 02 were either linear-parabolic or parabolic depending on temperature and P-O2, whereas that in CO2 was always parabolic. The activation energies for the parabolic oxidation in O-2 and CO2 were 210 and 150 kJ/mol, respectively, suggesting different rate-determining process in these atmospheres. The bubble formation was controlled by temperature and P-O2 being independent of oxidant gas species. The linear and parabolic oxidation rates were accelerated by the bubble formation. (C) 2002 Elsevier Science Ltd. All rights reserved.