Gate modulation in carbon nanotube field effect transistors-based NH3 gas sensors
Gate modulation in carbon nanotube field effect transistors-based NH3 gas sensors
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DOI：
10.1016/j.snb.2008.01.025
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发表时间：
2008-05-28
影响因子：
8.4
通讯作者：
Marzari, Nicola
中科院分区：
文献类型：
--
作者：
Peng, Ning;Zhang, Qing;Marzari, Nicola
Single-walled carbon nanotube field effect transistors (CNTFETs) are used as NH3 gas sensors and their sensing performances are studied in terms of gate biasing effect. By applying a positive gate bias, a high sensitivity of 178.5% per ppm, is achieved. The reversibility of the CNTFET sensors is also found to be significantly improved under the appropriate positive gate voltages. In this study, an in-depth understanding of how the electrical properties of the CNTFETs are affected by NH3 gas is gained. (C) 2008 Elsevier B.V. All rights reserved.
