Spectroscopic study of CdTe layers grown by molecular‐beam epitaxy on (001) and (111) Cd0.96Zn0.04Te substrates
Spectroscopic study of CdTe layers grown by molecular‐beam epitaxy on (001) and (111) Cd0.96Zn0.04Te substrates
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(001) 和 (111) Cd0.96Zn0.04Te 衬底上分子束外延生长的 CdTe 层的光谱研究
DOI：
10.1063/1.344433
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发表时间：
1989
影响因子：
3.2
通讯作者：
J. Pautrat
中科院分区：
文献类型：
--
作者：
F. Dal'bo;G. Lentz;N. Magnea;H. Mariette;L. S. Dang;J. Pautrat
用高分辨光致发光、反射率、透射率和共振激发光谱等手段研究了分子束外延生长的CdTe的光学性质。在(001)和(111)B取向的Cd0.96Zn0.04Te衬底上生长了CdTe外延层。与杂质束缚激子复合相关的尖锐而强烈的谱线主导了光谱，表明晶体质量良好，杂质污染水平较低。对于施主束缚激子线，观察到了两个电子跃迁，这使得通过与以前在块体材料上获得的数据相比较，可以识别施主(可能是Ga)的化学性质。然而，对于受主谱线，对光谱有贡献的浅态不同于大部分报道的浅态，并且似乎与更复杂的中心相关。这项研究还揭示了残余应变贡献的重要性。此外，还观察到两种材料在光学性质上的显著差异。
The optical properties of CdTe grown by molecular‐beam epitaxy are investigated by means of high‐resolution photoluminescence, reflectivity, transmission, and resonant excitation spectroscopy. The CdTe epilayers are grown on (001)‐ and (111) B‐oriented Cd0.96Zn0.04Te substrates. Sharp and strong lines associated with impurity bound exciton recombination dominate the spectra and indicate a good crystalline quality as well as a low level of impurity contamination. For the donor bound exciton lines, two electron transitions are observed which allow an identification of the chemical nature of the donors (probably Ga) by comparison with the data previously obtained on bulk material. For the acceptor lines, however, the shallow states which contribute to the spectra are different from those reported in the bulk and seem correlated with more complex centers. This study also reveals the importance of the residual strain contribution. Moreover, the marked difference observed for the optical properties between the ...