Oxide nanodots and ultrathin layers fabricated on silicon using nonfocused multicharged ion beams
Oxide nanodots and ultrathin layers fabricated on silicon using nonfocused multicharged ion beams
复制标题
使用非聚焦多电荷离子束在硅上制造氧化物纳米点和超薄层
DOI：
10.1116/1.1324647
复制
发表时间：
2000
影响因子：
1.4
通讯作者：
L. Vallier
中科院分区：
文献类型：
--
作者：
G. Borsoni;M. Gros;M. Korwin;R. Laffitte;V. L. Roux;L. Vallier
我们用慢多电荷氩离子在氧分压为1000的真空中在硅表面上形成直径为几十纳米的氧化物点。该技术的主要特点是入射的多电荷离子不会穿透到表面之下，因此不会对衬底产生电离诱导的改性。因此，我们利用多电荷离子与固体表面相互作用提供的独特可能性，非接触蹦床效应，打开氢化硅的键，并用氧取代它。本文介绍了多电荷慢离子与表面相互作用的基本原理，在X-离子实验室建立的多电荷慢离子束线，以及在硅上形成氧化物点的实验结果，并利用它们作为反应离子刻蚀工艺的掩模生长三维晶体硅结构。潜在的应用是在纳米闪存多点型非易失性存储器。
We have used slow multicharged argon ions in ultrahigh vacuum with a partial pressure of oxygen to form ultrathin (subnanometer) oxide dots of a few tens of nanometer diameter on a silicon surface. The main characteristic of this technique is that the incident multicharged ion does not penetrate below the surface, so there is no implantation-induced modifications of the substrate. Thus, we utilized a unique possibility provided by the multicharged ions interaction with surfaces of solids, the noncontact trampoline effect, to open the bonds of hydrogenated silicon, and replace it with oxygen. This article presents the fundamentals of slow multicharged ion interaction with a surface, the experimental multicharged ion beam line build at X-ion laboratory, and obtained results of oxide dot formation on silicon, using them as a mask in a reactive ion etching process to grow three-dimensional crystalline silicon structures. Potential applications are in nanoflash–multidot type nonvolatile memories.