Depletion Characteristics of Direct Schottky Contacts to Quantum Wells Formed by In Situ Selective Electrochemical Process
Depletion Characteristics of Direct Schottky Contacts to Quantum Wells Formed by In Situ Selective Electrochemical Process
复制标题
原位选择性电化学过程形成的量子阱直接肖特基接触的耗尽特性
DOI：
10.1143/jjap.34.1149
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发表时间：
1995
期刊：
影响因子：
--
通讯作者：
H. Hasegawa
中科院分区：
文献类型：
--
作者：
T. Hashizume;H. Okada;N. Wu;H. Hasegawa
采用C-V和电子束感应电流（EBIC）技术对原位选择性电化学过程形成的直接肖特基/量子阱（QW）触点的耗尽特性进行了系统表征。EBIC图像清楚地显示，势垒存在于量子阱层的边缘。结果表明，肖特基/QW触点的电容与ln {1/(V bi-V)}呈线性关系，其中V bi为内置电压，EBIC信号的耗尽宽度与外加电压成正比。这些结果表明，肖特基/量子阱系统可以实现良好的耗尽特性。
Depletion properties of direct Schottky/quantum well (QW) contacts formed by the in situ selective electro-chemical process were systematically characterized by the C-V and electron-beam-induced current (EBIC) techniques. The EBIC images clearly showed that the barrier exists at the edge of the QW layer. It was found that the capacitance of the Schottky/QW contact depends linearly on ln {1/(V bi-V)}, where the V bi is built-in voltage, and that the depletion width obtained from the EBIC signal is proportional to the applied voltage. These results demonstrate that well-behaved depletion characteristics of the Schottky/QW systems can be realized.