A 100 MHz PRF IR-UWB CMOS Transceiver With Pulse Shaping Capabilities and Peak Voltage Detector
A 100 MHz PRF IR-UWB CMOS Transceiver With Pulse Shaping Capabilities and Peak Voltage Detector
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DOI:
10.1109/tcsi.2017.2669902
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发表时间:
2017-06
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通讯作者:
R. Vauché;E. Muhr;O. Fourquin;S. Bourdel;J. Gaubert;N. Dehaese;S. Meillére;H. Barthélemy;L. Ouvry
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文献类型:
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作者:
R. Vauché;E. Muhr;O. Fourquin;S. Bourdel;J. Gaubert;N. Dehaese;S. Meillére;H. Barthélemy;L. Ouvry
This paper presents a high-rate IR-UWB transceiver chipset implemented in a 130-nm CMOS technology for WBAN and biomedical applications in the 3.1–4.9 GHz band. The transmitter is based on a pulse synthesizer and an analytical up-converted Gaussian pulse is used to predict its settings. Its measured peak-to-peak output voltage is equal to $0.9~V_{\mathrm{ pp}}$ on a 100 $\Omega $ load for a central frequency of 4 GHz, and a supply voltage of 1.2 V, which gives an emitted energy per pulse of 0.64 pJ. The receiver is a non-coherent architecture based on an LNA followed by a peak-voltage detector. A BER of 10−3 is measured for a 3.1–4.9 GHz input peak-to-peak pulse amplitude of 1.1 mV, which corresponds to a sensitivity of −85.8 dBm at 1 Mb/s and gives a communication range estimated to 1.9 m.