Microcavity-coupled emitters in hexagonal boron nitride
Microcavity-coupled emitters in hexagonal boron nitride
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DOI：
10.1515/nanoph-2020-0187
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发表时间：
2019-06
期刊：
影响因子：
7.5
通讯作者：
N. Proscia;H. Jayakumar;X. Ge;Gabriel I. L'opez-Morales;Zav Shotan;Weidong Zhou;C. Meriles;V. Menon
中科院分区：
文献类型：
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作者：
N. Proscia;H. Jayakumar;X. Ge;Gabriel I. L'opez-Morales;Zav Shotan;Weidong Zhou;C. Meriles;V. Menon
摘要量子发射体在光子结构中的集成是通过紧凑型固态器件产生和操纵按需单光子的更广泛探索中的重要一步。不幸的是，依赖于同时充当发射体主机的材料平台的实现常常在所需的发射体特性与光子系统的实用性和性能之间进行权衡。在这里，我们展示了Si3N4微盘光学谐振器与∼20 nm厚的六方氮化硼(HBN)形式的明亮发射极主机的“拾取和放置”集成。薄膜围绕微盘折叠，最大限度地接触，最终形成hBN/Si3N4混合结构。在谐振器周长的hBN薄膜中发展的局域应变确定地激活了微盘的回音廊模式体积内的低密度缺陷发射体。这些条件使得我们能够通过微盘腔模式演示hBN中缺陷态发射的腔介质外耦合。我们的结果为芯片级量子光子电路的发展铺平了道路，该电路具有独立的发射器/谐振器优化的有源和无源功能。
Abstract Integration of quantum emitters in photonic structures is an important step in the broader quest to generate and manipulate on-demand single photons via compact solid-state devices. Unfortunately, implementations relying on material platforms that also serve as the emitter host often suffer from a tradeoff between the desired emitter properties and the photonic system practicality and performance. Here, we demonstrate “pick and place” integration of a Si3N4 microdisk optical resonator with a bright emitter host in the form of ∼20-nm-thick hexagonal boron nitride (hBN). The film folds around the microdisk maximizing contact to ultimately form a hybrid hBN/Si3N4 structure. The local strain that develops in the hBN film at the resonator circumference deterministically activates a low density of defect emitters within the whispering gallery mode volume of the microdisk. These conditions allow us to demonstrate cavity-mediated out-coupling of emission from defect states in hBN through the microdisk cavity modes. Our results pave the route toward the development of chip-scale quantum photonic circuits with independent emitter/resonator optimization for active and passive functionalities.