Mobility enhancement in local strain channel nMOSFETs by stacked a-Si/poly-Si gate and capping nitride
Mobility enhancement in local strain channel nMOSFETs by stacked a-Si/poly-Si gate and capping nitride
复制标题
通过堆叠非晶硅/多晶硅栅极和覆盖氮化物增强局部应变沟道 nMOSFET 的迁移率
DOI：
10.1109/led.2005.845499
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发表时间：
2005
影响因子：
4.9
通讯作者：
T. Chao
中科院分区：
文献类型：
--
作者：
T. Lu;T. Chao
采用应力控制技术，利用叠层a-Si/多晶硅栅极和SiN盖层，制作了局域应变沟道nMOSFET。结果表明，nMOSFET的跨导(G/subM/)随a-Si厚度的增加而增大。我们还发现，与具有SiN盖层的器件相比，具有SiN盖层的器件的G/subM/比增加了17%。与未覆盖SiN层的单层多晶硅栅极结构相比，有盖层的叠层a-Si/多晶硅栅极结构的G/subM/可进一步提高29%。
A local strained channel nMOSFET has been fabricated by a stress control technique utilizing a stacked a-Si/poly-Si gate and a SiN capping layer. It is found that the transconductance (G/sub M/) of nMOSFETs increases as the thickness of a-Si is increased. We also found that the G/sub M/ of devices with the SiN capping layer exhibits a 17% increase compared to that of its counterparts. The stacked gate a-Si/poly-Si with the capping layer can improve the G/sub M/ further to 29% more than the single-poly-Si gate structure without SiN capping layer.