CVD Polymers for Devices and Device Fabrication
CVD Polymers for Devices and Device Fabrication
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DOI：
10.1002/adma.201604606
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发表时间：
2016-12
期刊：
影响因子：
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通讯作者：
Minghui Wang;Xiaoxue Wang;P. Moni;Andong Liu;Do Han Kim;W. Jo;H. Sojoudi;K. Gleason
中科院分区：
文献类型：
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作者：
Minghui Wang;Xiaoxue Wang;P. Moni;Andong Liu;Do Han Kim;W. Jo;H. Sojoudi;K. Gleason
化学气相沉积（CVD）聚合是一种由气相反应物直接在衬底上合成有机薄膜的方法。介电性、半导体性、导电性和离子导电性CVD聚合物都很容易集成到器件中。CVD过程中溶剂的缺乏使得高纯度层的生长成为可能，并且避免了可能导致针孔缺陷的脱湿现象。通过限制污染物和缺陷，超薄（<10 nm） CVD聚合物器件层已经在多个实验室中制造出来。CVD方法特别适合于合成不溶性导电聚合物、具有高密度有机官能团的层和鲁棒交联网络。此外，CVD聚合物因其保形覆盖粗糙表面的能力而受到重视，如纸张和纺织基材，以及微纳米结构器件的复杂几何形状。通过采用较低的加工温度，CVD聚合避免了对衬底和底层器件层的破坏。本文讨论了主要CVD聚合技术的机理及其在器件和器件制造中的应用进展，重点介绍了引发CVD （iCVD）和氧化CVD （oCVD）聚合。
Chemical vapor deposition (CVD) polymerization directly synthesizes organic thin films on a substrate from vapor phase reactants. Dielectric, semiconducting, electrically conducting, and ionically conducting CVD polymers have all been readily integrated into devices. The absence of solvent in the CVD process enables the growth of high‐purity layers and avoids the potential of dewetting phenomena, which lead to pinhole defects. By limiting contaminants and defects, ultrathin (<10 nm) CVD polymeric device layers have been fabricated in multiple laboratories. The CVD method is particularly suitable for synthesizing insoluble conductive polymers, layers with high densities of organic functional groups, and robust crosslinked networks. Additionally, CVD polymers are prized for the ability to conformally cover rough surfaces, like those of paper and textile substrates, as well as the complex geometries of micro‐ and nanostructured devices. By employing low processing temperatures, CVD polymerization avoids damaging substrates and underlying device layers. This report discusses the mechanisms of the major CVD polymerization techniques and the recent progress of their applications in devices and device fabrication, with emphasis on initiated CVD (iCVD) and oxidative CVD (oCVD) polymerization.