Photocurrent characteristics of nanostructured thin films consisting of surface-modified silicon nanoparticles
Photocurrent characteristics of nanostructured thin films consisting of surface-modified silicon nanoparticles
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DOI：
10.1088/1742-6596/1220/1/012048
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发表时间：
2019-05
期刊：
影响因子：
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通讯作者：
Ryu-ichi Yoshikado;T. Hasegawa;Yoshihito Tanaka;Shuhei Tsubota;Seiichi Sato
中科院分区：
文献类型：
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作者：
Ryu-ichi Yoshikado;T. Hasegawa;Yoshihito Tanaka;Shuhei Tsubota;Seiichi Sato
我们研究了由硫代琥珀酸(MSA)修饰的硅纳米颗粒网络组成的薄膜的光学和电学性质。建立了光电流测量系统，观察了光电流信号与激发光能量和功率的关系。此外，我们还观察了纳米粒子薄膜和溶液的吸收光谱，以阐明纳米粒子结构对光学跃迁性质的贡献。结果表明，光电流具有激发能量依赖性，但其分布与体硅光电二极管的分布不同。这一行为表明，特定的光生载流子传输起源于MSA修饰的硅纳米颗粒薄膜的结构。
We have studied optical and electrical properties in thin films consisting of the network of silicon nanoparticles modified with mercaptosuccinic acid (MSA). A photocurrent measurement system was set up to observe the photocurrent signal as functions of excitation photon energy and power. In addition, we observed the absorption spectra of the thin film and solution of the nanoparticles to clarify the contribution of the nanoparticles structure to the optical transition property. It was found that the photocurrent has an excitation-energy dependence while the profile is different from that of a bulk silicon photodiode. This behaviour suggests the specific photogenerated-carrier transport originating from the structure of the thin film of MSA-modified silicon nanoparticles.