Light-Controlled Nanoscopic Writing of Electronic Memories Using the Tip-Enhanced Bulk Photovoltaic Effect.
Light-Controlled Nanoscopic Writing of Electronic Memories Using the Tip-Enhanced Bulk Photovoltaic Effect.
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DOI：
10.1021/acsami.8b22638
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发表时间：
2019-02
影响因子：
9.5
通讯作者：
Zheng‐Dong Luo;Dae-Sung Park;Ming-Min Yang;M. Alexe
中科院分区：
文献类型：
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作者：
Zheng‐Dong Luo;Dae-Sung Park;Ming-Min Yang;M. Alexe
非易失性纳米级存储器的光控制可以代表具有存储器和逻辑功能的新型光电器件的基本步骤。然而，大多数提出的设备表现出不充分的控制方面的可逆性，数据保留，光敏性，有限的光敏区域，等等。在这里，在一个概念验证的工作，我们展示了使用的尖端增强体光伏（BPV）的效果，实现可编程的纳米写入的非光敏电子器件的光控制。我们表明，固态存储器件的电子性能可以可逆和位置精确操纵在纳米尺度上使用BPV效应结合纳米级接触连接，即原子力显微镜（AFM）探针技术在这项工作中。铁电隧道结隧穿电阻的105%以上的可逆开关完全由光控制实现。使用相同的光控AFM探针技术，我们还提出了精确的纳米级和多态写入的LaAlO 3/SrTiO 3二维电子气（2DEG）为基础的场效应晶体管。尖端增强的BPV效应可以为纳米级的各种电子存储器件的可逆和多态光控制提供新的途径，并可能导致光电应用中更复杂的功能。
The light control of nonvolatile nanoscale memories could represent a fundamental step toward novel optoelectronic devices with memory and logic functionalities. However, most of the proposed devices exhibit insufficient control in terms of the reversibility, data retention, photosensitivity, limited-photoactive area, and so forth. Here, in a proof-of-concept work, we demonstrate the use of the tip-enhanced bulk photovoltaic (BPV) effect to realize programmable nanoscopic writing of nonphotoactive electronic devices by light control. We show that electronic properties of solid-state memory devices can be reversibly and location-precisely manipulated in the nanoscale using the BPV effect in combination with the nanoscale contact connection, that is, atomic force microscopy (AFM) probe technique in this work. More than 105% reversible switching of tunneling electroresistance of ferroelectric tunnel junctions is exclusively achieved by light control. Using the same light-controlled AFM probe technique, we also present precise nanoscopic and multiple-state writing of LaAlO3/SrTiO3 two-dimensional electron gas (2DEG)-based field-effect transistors. The tip-enhanced BPV effect can offer a novel avenue for reversible and multistate light control of a wide range of electronic memory devices in the nanoscale and may lead to more sophisticated functionalities in optoelectronic applications.