Nanolithography Using Fullerene Films as an Electron Beam Resist
Nanolithography Using Fullerene Films as an Electron Beam Resist
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使用富勒烯薄膜作为电子束抗蚀剂的纳米光刻
DOI：
10.1143/jjap.35.l63
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发表时间：
1996
影响因子：
1.5
通讯作者：
T. Kanayama
中科院分区：
文献类型：
--
作者：
T. Tada;T. Kanayama
电子束辐照可降低蒸发C60薄膜在一氯苯等有机溶剂中的溶解速率，表明该材料可作为负性电子束抗蚀剂，灵敏度可达1×10- 2C/cm ~ 2。它比传统的酚醛清漆抗蚀剂具有更高的干蚀刻耐久性。它的适用性nanofabelets已被证明通过制造硅柱的直径为20-30 nm，使用电子回旋共振微波等离子体蚀刻和点图案中定义的C60膜作为蚀刻掩模。
Electron beam (e-beam) irradiation has been found to reduce the dissolution rate of evaporated C60 films in organic solvents such as monochlorobenzene, which shows that this material acts as a negative e-beam resist with a sensitivity of 1×10-2 C/cm2. It has higher dry-etch durability than conventional novolac resists. Its applicability to nanofabrication has been demonstrated by fabricating Si pillars of 20–30 nm diameter using electron cyclotron resonance microwave plasma etching and dot patterns defined in the C60 film as etching masks.