ARSENIC ANTISITE-RELATED DEFECTS IN LOW-TEMPERATURE MBE GROWN GAAS
ARSENIC ANTISITE-RELATED DEFECTS IN LOW-TEMPERATURE MBE GROWN GAAS
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DOI：
10.1088/0268-1242/7/8/002
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发表时间：
1992-08-01
影响因子：
1.9
通讯作者：
WALUKIEWICZ, W
中科院分区：
文献类型：
--
作者：
KRAMBROCK, K;LINDE, M;WALUKIEWICZ, W
通过分子束外延（MBE）方法在低温（200 ℃）下生长的GaAs层以及在300 ℃下生长的高度掺杂有Be或Si的MBE样品在光吸收和吸收的磁性圆二色性（MCDA）中显示出高浓度的As反位相关缺陷。用EPR的光学检测表明，这些与反位有关的缺陷具有类似的EL 2缺陷的性质，除了EL 2漂白特性和所谓的零声子线。它们的自旋-晶格弛豫时间与EL ~（2+）相比大大减小。这些差异可能与它们的高浓度有关，浓度约为10（19）-10（20）cm-3。在MBE样品生长在更高的温度（325摄氏度，400摄氏度）一个新的反位相关的缺陷被检测到减少As-75超精细分裂相比，EL 2+。这种新的反位相关的缺陷具有非常相似的性质，以前在水平布里奇曼n型GaAs中检测到的另一个反位相关的缺陷。四个不同的反位相关的缺陷与类似的减少As-75超精细分裂的比较。
GaAs layers grown by the molecular beam epitaxy (MBE) method at low temperatures (200-degrees-C) and also MBE samples grown at 300-degrees-C highly doped with Be or Si show high concentrations of As antisite-related defects in the optical absorption and in the magnetic circular dichroism of the absorption (MCDA). With optical detection of EPR it is shown that these antisite-related defects have properties similar to those of the EL2 defects except for the EL2 bleaching characteristics and the so called zero phonon line. Their spin-lattice relaxation time is strongly reduced compared with that of EL2+. These differences may be related to their high concentrations, which are of the order of approximately 10(19)-10(20) cm-3. In MBE samples grown at higher temperatures (325-degrees-C, 400-degrees-C) a new As antisite-related defect was detected with a reduced As-75 hyperfine splitting as compared with that of EL2+. This new As antisite-related defect has properties very similar to those of another As antisite-related defect previously detected in horizontal Bridgman n-type GaAs. A comparison of four different As antisite-related defects with similar reduced As-75 hyperfine splittings is presented.