Influence of barrier interlayers on the performance of Mo/Be multilayer mirrors for next-generation EUV lithography.
Influence of barrier interlayers on the performance of Mo/Be multilayer mirrors for next-generation EUV lithography.
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DOI:
10.1364/oe.26.033718
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发表时间:
2018-12
期刊:
影响因子:
3.8
通讯作者:
M. Svechnikov;N. Chkhalo;S. A. Gusev;A. N. Nechay;D. E. Pariev;A. Pestov;V. Polkovnikov;D. Tatarskiy;N. Salashchenko;F. Schäfers;M. Sertsu;A. Sokolov;Y. Vainer;M. Zorina
中科院分区:
文献类型:
--
作者:
M. Svechnikov;N. Chkhalo;S. A. Gusev;A. N. Nechay;D. E. Pariev;A. Pestov;V. Polkovnikov;D. Tatarskiy;N. Salashchenko;F. Schäfers;M. Sertsu;A. Sokolov;Y. Vainer;M. Zorina
A comparative study was carried out of the structure and reflection performance of four types of multilayer mirror for extreme ultraviolet lithography at 11.2 nm; these were a pure Mo/Be structure and three Mo/Be-based structures with thin B4C, C and Si interlayers. It was demonstrated that Mo/Be mirrors show maximum reflectance at normal incidence, while maximum structural perfection is shown by Mo/Be/Si mirrors. The introduction of B4C and C layers into the structure increases the interlayer roughness and reduces the sharpness of the interfaces, adversely affecting the target coating characteristics. Results are presented for studies using four techniques: X-ray reflectometry, small-angle X-ray scattering, atomic force microscopy, and transmission electron microscopy.