High critical-current density with less anisotropy in BaFe2(As,P)2 epitaxial thin films: Effect of intentionally grown c-axis vortex-pinning centers
High critical-current density with less anisotropy in BaFe2(As,P)2 epitaxial thin films: Effect of intentionally grown c-axis vortex-pinning centers
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DOI：
10.1063/1.4875956
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发表时间：
2014-03
影响因子：
4
通讯作者：
Hikaru Sato;H. Hiramatsu;T. Kamiya;H. Hosono
中科院分区：
文献类型：
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作者：
Hikaru Sato;H. Hiramatsu;T. Kamiya;H. Hosono
本文报道了BaFe2(As，P)2外延薄膜具有高且各向同性的临界电流密度Jc。将膜的生长速率降低到2.2 A/s后，Jc在磁场方向上的各向同性得到了显著改善。低生长速率有助于优先沿c轴排列位错，这可以很好地作为c轴涡钉钉中心。由于有意引入有效钉钉，在9 T时的绝对Jc大于其他铁基超导体和传统合金超导导线。
We report herein a high and isotropic critical-current density Jc for BaFe2(As,P)2 epitaxial films. The isotropy of Jc with respect to the magnetic-field direction was improved significantly by decreasing the film growth rate to 2.2 A/s. The low growth rate served to preferentially align dislocations along the c-axis, which work well as c-axis vortex-pinning centers. Because of the intentional introduction of effective pinning, the absolute Jc at 9 T was larger than that obtained for other iron-based superconductors and conventional alloy superconducting wires.